ECE446/ECE531 Microelectronics Assignment 1

  1. The following link lists electrical test data for runs of the On Semiconductor C5 Process. Download twenty (or more) sets of data (run type SKD). Prepare a spreadsheet with the run number (column A), the nwell sheet resistance (B), poly sheet resistance (C), N+ and P+ sheet resistance and contact resistance (columns D – G), and the poly/poly2 area capacitance (H). Calculate the mean value of each parameter. Show histograms of the distribution of each value. You can work together on this problem, but specify who were the members of the work group. Be prepared to generate a couple of power-point slides describing your results.

  2. An interconnect line (wire) is made from a material that has a resistivity ρ = 48 µΩ-cm. The interconnect is 120 nm thick. The line has width of 0.6 µm.
    1. Calculate the sheet resistance RS of the line.
    2. Find the line resistance if the line is 180 µm long.

  3. If the area capacitance of poly2-poly capacitors is 0.94 fF/(µm)2, find the thickness of the SiO2 dielectric layer between the poly and poly2 layers.

  4. Model an RC series circuit in Spice where R is your birth day (1 – 31) in kΩ and C is your birth month (1 – 12) in nF. Calculate the rise and fall time (from the spice simulation) and relate them to the RC time-constant. Use an ideal square-wave as a signal source. What period did you choose to get valid results?

  5. MOS transistors need high gate capacitance. What materials are proposed or used to increase the dielectric constant over SiO2 = 3.9? Low capacitance is desired between wire layers. What materials are proposed or used to decrease the dieelectric constant of silicon dioxide? Reference the book, journal, or URL of any web documents consulted.

  6. What is the Copper Damascene process? How does it get its name and why is it used? Identify your sources: book, web, or journal.

  7. Describe the technology behind MIM (metal-insulator-metal) and fringe (or fractal) capacitors. Identify your sources.

Maintained by John Loomis, last updated 28 August 2008