QT OPTOELECTRONICS Infrared Products
Sidelooker (.070") Plastic Silicon Infrared Photosensors

L14Q1

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Package Outlines

Dimensions for all drawings are in inches (mm).
Tolerance of +/- .010 (.25) unless otherwise stated on all non-nominal dimensions.

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Testing Conditions and Additional Information

On-State Collector Current @ Ee = 1.5 mW/cm2 (GaAs), VCE = 5 V

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Maximum Ratings Table

Maximum Ratings
Storage Temperature -40 to +100° C
Operating Temperature -40 to +100° C
Soldering:
  • Lead Temperature (Iron)
  • Lead temperature (Flow)
 
240° C for 5 s
260° C for 10 s
Collector-Emitter Breakdown Voltage 30 V
Emitter-Collector Breakdown Voltage
  • (L14R, QSE133)
  • (QSX,L14Q)
 
6.0 V
5.0 V
Power Dissipation 150 mW
Derate linearly at 2.00 mW/°C above 25° C

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This page was last updated on January 4, 1998